TN2460L/tn2460t siliconix p-37409erev. c, 04-jul-94 1 n-channel enhancement-mode mosfet transistors product summary part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d min (ma) TN2460L 240 60 @ v gs = 10 v 0.5 to 1.8 75 tn2460t 240 60 @ v gs = 10 v 0.5 to 1.8 51 features benefits applications low on-resistance: 40 secondary breakdown free: 260 v low power/voltage driven low input and output leakage excellent thermal stability low offset voltage full-voltage operation easily driven without buffer low error voltage no high-temperature arun-awayo high-voltage drivers: relays, solenoids, lamps, hammers, displays, transistors, etc. telephone mute switches, ringer circuits power supply, converters motor control tn2460t (t2)* *marking code for to-236 to-226aa (to-92) top view s d g 1 2 3 g s d top view 2 3 to-236 (sot-23) 1 TN2460L absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol TN2460L tn2460t unit drain-source voltage v ds 240 240 v gate-source voltage v gs 20 20 v continuous drain current (t j = 150 c) t a = 25 c i d 75 51 continuous drain current (t j = 150 c) t a = 100 c i d 48 32 ma pulsed drain current a i dm 800 400 power dissipation t a = 25 c p d 0.8 0.36 w power dissipation t a = 100 c p d 0.32 0.14 w maximum junction-to-ambient r thja 156 350 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70205.
TN2460L/tn2460t 2 siliconix p-37409erev. c, 04-jul-94 specifications a limits parameter symbol test conditions min typ b max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 240 260 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.5 1.65 1.8 v gate body leakage i gss v ds = 0 v, v gs = 20 v 10 na gate - body leakage i gss t j = 125 c 5 na zero gate voltage drain current i dss v ds = 120 v, v gs = 0 v 0.1 a zero gate voltage drain current i dss t j = 125 c 5 a on state drain current c i d( ) v ds = 10 v, v gs =10 v 75 140 ma on - state drain current c i d(on) v ds = 10 v, v gs = 4.5 v 20 130 ma v gs = 10 v, i d = 0.05 a 38 60 drain-source on-resistance c r ds(on) v gs = 4.5 v, i d = 0.02 a 40 60 t j = 125 c 75 120 forward transconductance c g fs v ds = 10 v, i d = 0.05 a 30 70 ms dynamic input capacitance c iss 14 30 output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz 4 15 pf reverse transfer capacitance c rss 1 10 switching d turn-on time t on 25
005
8 20 ns turn-off time t off 0 . 05
20 35 ns notes a. t a = 25 c unless otherwise noted. vndn24 b. for design aid only, not subject to production testing. c. pulse test: pw 80 s duty cycle 1%. d. switching time is essentially independent of operating temperature.
TN2460L/tn2460t siliconix p-37409erev. c, 04-jul-94 3 typical characteristics (25 c unless otherwise noted) output characteristics transfer characteristics normalized on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage v gs gate-source voltage (v) v gs gate-source voltage (v) drain current (ma) i d drain current (ma) i d on-resistance ( r ds(on) v ds drain-to-source voltage (v) i d drain current (a) t j junction temperature ( c) r ds(on) drain-source on-resistance (normalized) 200 0 4 8 12 16 20 160 120 80 40 0 v gs = 10 v 4 v 3 v 2 v 100 80 60 0 01 5 40 20 234 v ds = 15 v 125 c t j = 55 c 100 0 4 8 12 16 20 90 80 70 30 60 50 40 10 ma 50 ma i d = 100 ma on-resistance vs. drain current on-resistance ( r ds(on) 125 100 75 0 0 50 250 50 25 100 150 200 v gs = 10 v 2.25 2.00 1.75 0.50 50 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 4.5 v i d = 50 ma drain current (ma) i d threshold region v gs gate-source voltage (v) 10 1 0.01 0.75 1 2.5 0.1 1.25 1.5 1.75 2 2.25 55 c t j = 150 c v ds = 5 v 25 c 75 c 25 c
TN2460L/tn2460t 4 siliconix p-37409erev. c, 04-jul-94 typical characteristics (25 c unless otherwise noted) (cont'd) 10 k 1 0.01 0.1 0.1 1 100 10 1 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 0.01 capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa) gate charge drive resistance effects on switching normalized effective transient thermal impedance t 1 square wave pulse duration (sec) r g gate resistor ( ) v ds drain-to-source voltage (v) q g total gate charge (pc) c capacitance (pf) gate-to-source voltage (v) v gs t switching time (ns) 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 20 16 12 0 010 50 8 4 20 30 40 v gs = 0 v c iss c oss c rss 15.0 12.5 10.0 0 0 50 300 7.5 5.0 100 150 200 2.5 250 r l = 6.2 k v ds = 100 v 192 v load condition effects on switching i d drain current (a) t switching time (ns) 10 50 100 100 10 1 20 50 20 5 2 v dd = 25 v r g = 25 v gs = 0 to 10 v t f t d(off) t r t d(on) 10 50 10 1 20 50 2 v dd = 25 v r l = 500 v gs = 0 to 10 v i d = 50 ma t f t d(off) t r t d(on)
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